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Year |
# |
Title |
Authors |
Journal |
link |
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2002 |
81 |
Electronic structure of the monolayer and double-layer Ge on Si(001) |
H. W. Yeom, J. W. Kim, K. Tono, I. Matusda, T. Ohta |
Phys. Rev. B |
submit |
|
2002 |
80 |
Reinvestigation of Si 2p photoemission line shape of the clean Si(001)c(4x2) surface |
H. Koh, J. W. Kim, W. H. Choi, and H. W. Yeom |
Phys. Rev. B |
submit |
|
2002 |
79 |
Comment on ¡®Structures of quantum wires in Au/Si(557)' |
S. Jeong, H. W. Yeom, and I. W. Lyo |
Phys. Rev. Lett |
submit |
|
2002 |
78 |
Ab initio study of adsorption and diffusion of Ag atoms on a Si(001) surface |
K. Kong, H. W. Yeom, D. Ahn, H. Yi, and B. D. Yu |
Phys. Rev. B |
submit |
|
2002 |
77 |
Core-level
photoemission study of additional In adsorption onto the |
S. W. Cho, K. Nakamura, H. Koh, W. H. Choi, C. N. Whang, and H. W. Yeom |
Phys. Rev. B |
submit |
|
2002 |
76 |
Surface and interface structures of epitaxial silicon nitride on Si(001) |
J. W. Kim and H. W. Yeom |
Phys. Rev. B |
submit |
|
2002 |
75 |
High-resolution core-level photoemission study of GaAs(111)B surfaces |
K. Nakamura, K. Ono, T. Mano, M. Mizuguchi, K. Horiba, S. Nakazono, T. Kihara, and M. Oshima, and H. W. Yeom |
Phys. Rev. B |
submit |
|
2002 |
74 |
Spontaneous N incorporation onto a Si(001) surface |
J. W. Kim, K. J. Kong, B. D. Yu, Y. D. Chung, C. N. Whang, H. Yi, Y. H. Ha, D. W. Moon, H. W. Yeom |
Phys. Rev. Lett |
submit |
|
2002 |
73 |
Electronic Nature of one-dimensional noble metal nanowires on the Si(5512) surface |
J. R. Ahn, H. W. Yeom, Y. J. Kim, H. S. Lee, C. C. Hwang, and B. S. Kim |
Phys. Rev. B |
accepted |
|
2002 |
72 |
The study of the quantum well states in the ultra-thin silver film on the Si surface |
I. Matsuda, H. W. Yeom |
J. Electron Spectrosc. Relat. |
accepted |
|
2002 |
71 |
Does molecular oxygen adsorbate exist on the Si(111)7x7 surface at room temperature? |
H. W. Yeom |
Phys. Rev. B |
accepted |
|
2002 |
70 |
Characterization of films and interfaces in n-ZnO/p-Si photodiodes |
J. Y. Lee, Y. S. Choi, H. W. Yeom, Y. K. Yoon, J. H. Kim, and S. Im |
Thin Solid |
accepted |
|
2002 |
69 |
Adsorption of C2H2 and C2H4 on Si(001): core-level photoemission |
H. W. Yeom, S. Y. Baek, J. W. Kim, and H. Koh |
Phys. Rev. B 66, 115308 |
|
|
2002 |
68 |
Charge-density
wave and three dimensional Fermi surface in 1T-TaSe2 |
K. Horiba, K. Ono, J. H. Oh, T. Kihara, S. Nakazono, M. Oshima, O. Shiino, H. W. Yeom, A. Kakizaki, and, Y. Aiura |
Phys. Rev. B 66, 073106 |
|
|
2002 |
67 |
Chemical bonding of nitrogen in ultrathin Si oxynitride on Si(001) |
J. W. Kim, H. W. Yeom, Y. D. Chung, K. H. Jeong, C. N. Whang, M. K. Lee, and H. J. Shin |
Phys. Rev. B 66, 035312 |
|
|
2002 |
66 |
Nature of the symmetry-broken phase of the 1D metallic In/Si(111) surface |
H.W.Yeom, K.Horikoshi, H.M. Zhang, K.Ono, R.I.G Uhrberg |
Phys. Rev.B 65,251307(R) |
|
|
2002 |
65 |
Stress relief as the driving force for self-assembled Bi nanolines |
J. H. G. Qwen, K. Miki, H. Koh, H. W. Yeom, and D. R. Bowler |
Phys.Rev.Lett. 88,226104 |
|
|
2002 |
64 |
Determination of the bonding configuration of the metastable molecular oxygen adsorbed on a Si(111)-7x7 surface |
K. Sakamoto, F. Matsui, Masumi Hirano, H. W. Yeom, H. M. Zhang, and R. I. G. Uhrberg |
Phys.Rev.B 65,201309(R) |
|
|
2002 |
63 |
Adsorbate-induced pining of a charge-density wave in the quasi-1D metallic chains; Na-added In/Si(111)-4x1 system |
S.SLee, J.R. Ahn, N.D.Kim, J.H.Min, C.G.Hwang, J.W.Chung, H. W. Yeom, Serguei V.Ryjkov, and S. Hasegawa |
Phys. Rev. Lett. 88, 196401 |
|
|
2002 |
62 |
Core-level photoemission study of the Pb overlayers on Si(001) |
K.Nakamura, H.Koh, K.Tono, K.Ono, M.Oshima, and H. W. Yeom |
Phys.Rev.B 65, 165332 |
|
|
2002 |
61 |
Adsorption and reaction of NO on the Si(001) Surface |
Y.D.Chung, J.W.Kim, C.N.Whang and H.W.Yeom |
Phys.Rev.B 65, 155310 |
|
|
2002 |
60 |
Novel pathway to the epitaxial growth of diamond on cubic B-SiC(001) |
K. Kong, M. Han, H. W. Yeom, Y. Miyamoto, O. Sugino, T. Sasaki, T. Ono, and B. D. Yu |
Phys. Rev. Lett 88, 125504 |
|
|
2002 |
59 |
Determination of structural origin of Si 2p core level shift in As/Si(001)-2x1 surface |
R. Gunnella, H. W. Yeom, E. L. Bullock, L. S. O. Johasson, S. Kono, and F. Solal |
Surf. Sci. 499,244 |
|
|
2002 |
58 |
In-Plane dispersion of the quantum-well states of the epitaxial silver films on silicon |
I. Matsuda, T.Ohta and H.W.Yeom |
Phys.Rev.B 65, 085327 |
|
|
2002 |
57 |
Si 2p core-level study of Ag/Si(111)¡î3 ¥Ö ¡î3 and the effect of additional Ag adatoms |
R.I.G.Uhrberg, H.M.Zhang, T.Balasubreamainian, E.Landemark, and H.W.Yeom |
Phys.Rev.B 65,081305(R) |
|
|
2001 |
56 |
Automated angle-scanning photoemission spectroscopy system combined with molecular beam epitaxy at KeK-Pf BL-1C |
K. Ono, H.W. Yeom, K. Horiba, J.H. Oh, S. Nakazono, K. Nakamura, T. Mano, M. Mizuguchi, M. Oshima, Y. Aiura and A, Kakizaki, |
Nuclear. Meth. A 467-468,1497 |
|
|
2001 |
55 |
Photoelectron diffraction study of the Si 2p surface-core-level-shift of the Si(001)(1x2)-Sb surface |
M.Shimomura, T.abukawa, K.Yoshimura, J.H.Oh, H.W.Yeom, and S.Kono |
Surf.Sci.493,23 |
|
|
2001 |
54 |
Angle-resolved photoemission study of the hydrogenated 3C-SiC(001)2x1-H surface |
S. M. Widstrand, L. S. O. Johansson, K. O. Magnulsson, H.W.Yeom, S. Hara, and S. Yoshida |
Surf. Sci. 479,247 |
|
|
2001 |
53 |
Correspondence of experimental surface electronic structure of the Si(1 1 3)3×2 with structure models |
K. S. An, C. C. Hwang, H. S. Kim, C. -Y. Park, I. Matsuda, H. W. Yeom, S. Suga and A. Kakizaki |
Surf.Sci. 478, 123-130 |
|
|
2001 |
52 |
Chemical structure of the ultra-thin SiO2/Si(100) interface: angle resolved Si 2p photoemssion study |
J.H.Oh, H.W.Yeom, Y.Hagimoto, K.Ono, M.Oshima, N.Hirashita, M.Nywa, A.Toriumi and A.Kakizaki |
Phys.Rev.B 63, |
|
|
2001 |
51 |
Growth and electronci quantization of metastable silver films on Si(001) |
I.Matsuda, H.W.Yeom, K.Tono, T.Tanikawa, and T. ohta |
Phys.Rev.B 63, |
|
|
2001 |
50 |
self-organized quantum wires on semiconductor surfaces : The new frontier provided bt reduced dimensionality |
H.W.Yeom |
J.Electron Spectrosc. |
|
|
2000 |
49 |
Fermi surface nesting and structural transition on a metal surface: In/Cu(001) |
T. Nakagawa, G.I. Boshin, H. Fujioka, H. W. Yeom, I. Matsuda, N. Takagi, M. Nishijima, and T. Aruga |
Phys. Rev. Lett. 86.854 |
|
|
2000 |
48 |
Angle-resolved high-resolution electron-energy-loss study of In adsorbed Si(111)-(4x1) and (8x2) surfaces |
K. Sakamoto, H. Ashima, H. W. Yeom, and W. Uchida |
|
|
|
2000 |
47 |
Comment on "Carbon atomic chain formation on the ¥â-SiC(001) surface by controlled sp - sp3 transformation" |
S. Hara, J. Kitamura, H. Okushi, S. Yoshida, K. Kajimura, and H. W. Yeom |
Phys. Rev. Lett. 85, |
|
|
2000 |
46 |
Reinterpretation of molecular O2 chemisorbate in the initial oxidation of the Si(111)7x7 surface |
F. Matsuda, H. W. Yeom, K. Amemiya, K. Tono., and T. Ohta |
Phys. Rev. Lett. 85, |
|
|
2000 |
45 |
High resolution photoemission study of low-temperature oxidation on the Si(001) surface |
H. W. Yeom and R. I. G. Uhrberg |
Jpn. J. Appl. Phys. 39, |
|
|
2000 |
44 |
Adsorption and reaction of acetylene and ethylene on the Si(001)2x1 surface |
F. Matsui, H. W. Yeom , I. Matsuda and T. Ohta |
Phys. Rev. B 62, |
|
|
2000 |
43 |
Electronic structures of the CDW phase of 1T-TaSe2 |
I. Horiba, K. Ono, H. W. Yeom, M. Oshima |
Physica B 284-288, 1665 |
|
|
2000 |
42 |
Electronic structures of the Si(001) surface with Pb adsorbates |
K. Tono. H. W. Yeom, I. Matsuda, and T. Ohta |
Phys. Rev. B 61, 15866 |
|
|
2000 |
41 |
H-induced 3x1 phase of the Si-rich 3C-SiC(001) surface |
H. W. Yeom, I. Matsuda, Y.-C. Chao, S. Hara, S. Yoshida |
Phys. Rev. B 61, R2417 |
|
|
2000 |
40 |
Surface states of the 3C-SiC(001)2x1 surface studied with angle-resolved photoemission |
L. Duda, L.S.O. Johansson, B. Reihl, H. W. Yeom, S. Hara, and S. Yoshida |
Phys. Rev. B 61, R2460 |
|
|
1999 |
39 |
Perfect cellular disorder in two-dimensional system: the case of Si cells on 3C-SiC(001) surface |
S. Hara, J. Kitamura, H. Okushi, S. Misawa, S. Yoshida, H. W. Yeom, and R. I. G. Uhrberg |
Surf. Sci. 421, 143 |
|
|
1999 |
38 |
Angle-resolved photoemission study of the 3C-SiC(001)2x1 surface |
L. Duda, L.S.O. Johansson, B. Reihl, H. W. Yeom, S. Hara, and S. Yoshida |
Surf. Rev. Lett. 6, 1151 |
|
|
1999 |
37 |
Photoelectron diffraction study of Si(001)c(4x4)-C surface |
R. Kosugi, T. Abukawa, M. Shimomura, S. Sumitani, H. W. Yeom, T. Hanano, K. Tono, S. Suzuki, S. Sato, T. Ohta, S. Kono, and Y. Takakuwa |
J. Electron Spectrosc. Relat. Phenom. 101-103, 239-243 |
|
|
1999 |
36 |
Electronic structures of the 3C-SiC(001)2x1 surface studied with angle-resolved photoelectron spectroscopy |
L. Duda, L.S.O. Johansson, B. Reihl, H. W. Yeom, S. Hara, and S. Yoshida |
Surf. Sci. 439, 199 |
|
|
1999 |
35 |
The adsorption process of metastable molecular oxygen on a Si(111)-(7x7) surface |
K. Sakamoto, S. Doi, Y. Ushimi, K. Ohno, H. W. Yeom, T. Ohta, S. Suto, W. Uchida |
Phys. Rev. B 60, R84651 |
|
|
1999 |
34 |
Surface-core-level-shift photoelectron diffraction study of the ¥â-SiC(001)-c(2x2) surface |
M. Shimomura, H. W. Yeom, B. S. Mun, C. S. Fadley, S. Hara, S. Yoshida, and S. Kono |
Surf. Sci. 438, 237 |
|
|
1999 |
33 |
Surface reconstructions of 3C-SiC(001) studied by high-resolution core-level photoemission |
H. W. Yeom, Y.-C. Chao, S. Terada, S. Hara, S. Yoshida, and R.I.G. Uhrberg |
Surf. Sci. 433-435, 392-396 |
|
|
1999 |
32 |
Angle-resolved photoemission study of the electronic structure development during the Ag growth on the Si(001) surface |
I. Matsuda, H. W. Yeom, K. Tono, and T. Ohta |
Surf. Sci. 438, 231 |
|
|
1999 |
31 |
Atomic and electronic-band structures of anomalous carbon dimers on 3C-SiC(001)c(2x2) |
H. W. Yeom, M. Shimomura, J. Kitamura, S. Hara, K. Tono, I. Matsuda, B. S. Mun, W. A. R. Huff, T. Ohta, S. Kono, C. S. Fadley, H. Okushi, K. Kajimura, and S. Yoshida |
Phys. Rev. Lett. 83, 1640 |
|
|
1999 |
30 |
Electronic structure of the Si(001)c(6x2)-Ag surface studied by angle-resolved photoelectron spectroscopy using synchrotron radiation |
I. Matsuda, H. W. Yeom, K. Tono, and T. Ohta |
Phys. Rev. B 53, 1948 |
|
|
1999 |
29 |
Instability and charge density wave of metallic quantum chains on a silicon surface |
H. W. Yeom, S. Takeda, E. Rotenberg, I. Matsuda, C.M. Lee, J. Shaefer, K. Horikoshi, S.D. Kevan, T. Ohta, T. Nagao, and S. Hasegawa |
Phys. Rev. Lett. 82, 4898 |
|
|
1999 |
28 |
High-resolution core-level study of initial oxygen adsorption on Si(001): surface stoichiometry and anomalous Si 2p core level shifts |
H. W. Yeom, H. Hamamatsu, T. Ohta, and R. I. G. Uhrberg |
Phys. Rev. B Rapid Communication 59, R10413 |
|
|
1998 |
27 |
Determination of Ag arrangement on the Si(001)2x3-Ag surface by x-ray photoelectron diffraction |
M. Shimomura, T. Abukawa, M. Higa, M. Nakamura, S. M. Shivaprasad, H. W. Yeom, S. Suzuki, S. Sato, J. Tani, and S. Kono |
Surf. Rev. Lett. 5, 953 |
|
|
1998 |
26 |
Electronic structure of the Si-rich 3C-SiC(001)3x2 surface |
H. W. Yeom, Y.-C. Chao, I. Matsuda, S. Hara, S. Yoshida, and R. I. G. Uhrberg |
Phys. Rev. B 58, 10 540 |
|
|
1998 |
25 |
Comment on "STM studies of initial In growth on Si(001)2x1: the In ad-dimer chain and its I-V characteristics" |
H. W. Yeom |
Surf. Sci. 415, 299 |
|
|
1998 |
24 |
X-ray photoelectron diffraction and surface core-level shift study of clean InP(001) |
M. Shimomura, N. Sanada, G. Kaneda, T. Takeuchi, Y. Suzuki, Y. Fukuda, W.R.A. Huff, T. Abukawa, S. Kono, H. W. Yeom, and A. Kakizaki |
Surf. Sci. 412/413, 625 |
|
|
1998 |
23 |
Surface structure of cesium adsorption on Si(001) 2x1 surface |
H. Hamamatsu, H. W. Yeom, T. Yokoyama, T. Kayama, and T. Ohta |
Phys. Rev. B 57, 11883 |
|
|
1998 |
22 |
Adsorption of acetylene and ethylene on the Si(001)2x1 surface studied by NEXAFS and UPS |
F. Matsui, H. W. Yeom , A. Imanish, K. Isawa, I. Matsuda and T. Ohta |
Surf. Sci. Lett. 401, L413 |
|
|
1998 |
21 |
The InP(001)-(2x4) surface electronic structure by angle-resolved phtoelectron spectroscopy |
W.R.A. Huff, M. Shimomura, N. Sanada, G. Kaneda, T. Takeuchi, Y. Suzuki, H. W. Yeom, T. Abukawa, S. Kono, and Y. Fukuda |
J. Electron Spectrosc. Relat. Phenom. 88-91, 609 |
|
|
1998 |
20 |
Angle-resolved phtoelectron spectroscopy study of the InP(001)-(2x4) surface electronic structure |
W.R.A. Huff, M. Shimomura, N. Sanada, G. Kaneda, T. Takeuchi, Y. Suzuki, H. W. Yeom, T. Abukawa, S. Kono and Y. Fukuda |
Phys. Rev. B 57, 10132 |
|
|
1998 |
19 |
Origin of the anisotropy of spin-orbit branching ratio in angle-resolved photoemission |
H. W. Yeom, T. Abukawa, Y. Takakuwa, S. Fujimori, T. Okane, Y. Ogura, T. Miura , S. Sato, A. Kakizaki, and S. Kono |
Surf. Sci. Lett. 395, L236-L241 |
|
|
1998 |
18 |
Electronic structures of the Si(001)2x3-Ag surface |
H. W. Yeom, I. Matsuda, K. Tono and T. Ohta |
Phys. Rev. B 57, 3949-3954 |
|
|
1997 |
17 |
Surface core levels of the 3C-SiC(001)3x2 surface;Atomic origins and surface reconstruction |
H. W. Yeom, Y.C. Chao, S. Terada, S. Hara, S. Yoshida and R.I.G. Uhrberg |
Phys. Rev. B Rapid Communication 56, R15525 |
|
|
1997 |
16 |
Existence of a stable intermixing phase for monolayer Ge on Si(001) |
H. W. Yeom, M. Nakamura, T. Abukawa, M. Sasaki, S. Suzuki, S. Sato, and S. Kono |
Surf. Sci. Lett. 381, L533 |
|
|
1997 |
15 |
Surface electronic structures of the Si(001)2x3-In surface |
H. W. Yeom, T. Abukawa, Y. Takakuwa, Y. Mori, T. Shimatani, A. Kakizaki, and S. Kono |
Phys. Rev. B 55, 15669 |
|
|
1996 |
14 |
Initial stage growth and interface formation of Al on Si(001)2x1 studied by photoelectron spectroscopy using synchrotron radiation |
H.W. Yeom, T. Abukawa, Y. Takakuwa, M. Nakamura, M. Kimura, A. Kakizaki, and S. Kono |
Surf. Sci. 365, 328 |
|
|
1996 |
13 |
Surface core levels of In adsorption on Si(001)2x1 |
H. W. Yeom, T. Abukawa, Y. Takakuwa, Y. Mori, T. Shimatani, A. Kakizaki, and S. Kono |
Phys. Rev. B 54, 4456 |
|
|
1996 |
12 |
Angle dependence of the spin-orbit branching ratio |
E. L. Bullock, R. Gunnela, C. R. Natoli, H. W. Yeom, S. Kono, R. I. G. Uhrberg, L. S. O. Johansson |
Surf. Sci. 352-354, 352 |
|
|
1996 |
11 |
Multiple scattering study of synchrotron radiation phtoelectron diffraction from Si(001)2x2-In surface |
X. Chen, H. W. Yeom, T. Abukawa, Y. Takakuwa, T. Shimatani, Y. Mori, A. Kakizaki, S. Kono |
J. Electron Spectrosc. Relat. Phenom. 80, 147 |
|
|
1996 |
10 |
An angle-resolved phtoelectron spectroscopy study of the electronic structures of Si(001)2x2-Al and -In surfaces |
H. W. Yeom, T. Abukawa, Y. Takakuwa, M. Nakamura, M. Kimura, T. Shimatani, Y. Mori, A. Kakizaki, and S. Kono |
J. Electron Spectrosc. Relat. Phenom. 80, 177 |
|
|
1996 |
9 |
Surface electronic structure of Si(001)2x2-In studied by angle-resolved photoelectron spectroscopy |
H. W. Yeom, T. Abukawa, Y. Takakuwa, Y. Mori, T. Shimatani, A. Kakizaki, and S. Kono |
Phys. Rev. B 53, 1948 |
|
|
1995 |
8 |
Ag adsorption on a single domain Si(001)2x1 surface studied by electron and photoelectron diffraction |
S.M. Shivaprasad, T. Abukawa, H. W. Yeom, M. Nakamura, S. Suzuki, S. Sato, K. Sakamoto, T. Sakamoto, and S. Kono |
Surf. Sci. Lett. 344, L1245 |
|
|
1995 |
7 |
Direct determination of In dimer orientation of Si(001)2x3-In and 2x2-In surfaces |
H. W. Yeom, T. Abukawa, M. Nakamura, X. Chen, S. Suzuki, S. Sato, and S. Kono |
Surf. Sci. Lett. 340, L983 |
|
|
1995 |
6 |
Initial stage growth of In and Al on a single-domain Si(001)2x1 surface |
H.W. Yeom, T. Abukawa, M. Nakamura, S. Suzuki, S. Sato, K. Sakamoto, T. Sakamoto, and S. Kono |
Surf. Sci. 341, 328 |
|
|
1994 |
5 |
Surface electronic structure of single-domain Si(001)2x2-Al : an angle-resolved photoelectron spectroscopy study using synchrotron radiation |
H. W. Yeom, T. Abukawa, Y. Takakuwa, M. Nakamura, M. Kimura, A. Kakizaki, and S. Kono |
Surf. Sci. Lett. 321, L177 |
|
|
1994 |
4 |
Auger electron diffraction study of the initial statge of Ge heteroepitaxy on Si(001) |
M. Sasaki, T. Abukawa, H. W. Yeom, M. Yamada, S. Suzuki, S. Sato, and S. Kono |
Appl. Surf. Sci. 82/83, 387 |
|
|
1994 |
3 |
Existence of metastable molecular precursor to dissociated oxygen chemisorption on Si(111) and Si(100) at 40K |
J. M. Seo, K. J. Kim, H. W. Yeom, and Ch. Park |
J. Vac. Sci. Technol. A 12, 2255 |
|
|
1992 |
2 |
Interaction of low-energy oxygen ions with the Si(100) surface |
J. W. Chung, D. H. Baek, B. O. Kim, H. W. Yeom, and C. Y. Kim |
Phys. Rev. B 45, 1705 |
|
|
1989 |
1 |
Enhanced Raman scattering of silver benzenethiolate |
T. G. Lee, H. W. Yeom, S.-J. Oh, K. Kim, and M. S. Kim, Chem. |
Chem.Phys. Lett. 163, 98 |
|
Publication List